Mapping high-pressure Bridgman Cd0.8Zn0.2Te

被引:17
|
作者
Schieber, M [1 ]
Hermon, H
James, RB
Lund, J
Antolak, A
Morse, D
Kolesnikov, NN
Ivanov, YN
Goorsky, MS
Van Scyoc, JM
Yoon, H
Toney, J
Schlesinger, TE
Doty, FP
Cozzatti, JPD
机构
[1] Sandia Natl Labs, Livermore, CA 94550 USA
[2] Hebrew Univ Jerusalem, IL-91904 Jerusalem, Israel
[3] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
[4] Univ Calif Los Angeles, Los Angeles, CA 90024 USA
[5] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA
[6] Digirad Inc, San Diego, CA 92121 USA
关键词
CdZnTe; high-pressure Bridgman;
D O I
10.1109/23.650864
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single crystals of Cd0.8Zn0.2Te grown at the institute of Solid State Physics, Chernogolovka, Russia, by the high-pressure vertical Bridgman method (HPVB) were mapped using X-ray fluorescence (XRF), X-ray diffraction (XRD), photoluminescence (PL), and leakage current measurements, Most of the Russian samples which we refer to as p-type CZT were more uniform in Zn composition than U.S. commercially produced material. The Russian material had a poorer crystallinity and, in the best case, could only count nuclear radiation, Differences in the material properties between Russian (p-type) and U.S. (n-type) material will be described.
引用
收藏
页码:2566 / 2570
页数:5
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