The bonding sites and structure of C60 on the Si(100) surface

被引:36
|
作者
Godwin, PD [1 ]
Kenny, SD [1 ]
Smith, R [1 ]
机构
[1] Univ Loughborough, Inst Math Sci, Loughborough LE11 3TU, Leics, England
关键词
computer simulations; density functional calculations; chemisorption; silicon; fullerenes;
D O I
10.1016/S0039-6028(03)00074-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The possible structures of C-60 on the Si(100) surface have been investigated using ab initio total energy minimisations. The results show that fullerenes bond to the silicon surface by breaking carbon-carbon double bonds. One electron from the broken bond is contributed to the carbon-silicon bond. The second electron is generally involved in forming a new pi-bond within the fullerene cage, or, for the less energetically favourable structures, is delocalised over the surrounding bonds. The carbon-silicon bond formed is primarily covalent with some charge transfer. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:237 / 246
页数:10
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