Room-temperature terahertz heterodyne mixing in GaAs commercial transistors

被引：0

作者：

Tohme, L. ^{[1
]}

Blin, S. ^{[1
]}

Nouvel, P. ^{[1
]}

Varani, L. ^{[1
]}

Penarier, A. ^{[1
]}

机构：

[1] Univ Montpellier 2, CNRS, IES UMR 5214, Teralab, F-34095 Montpellier, France

来源：

2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report on the detection of terahertz heterodyne mixing in GaAs ultra-low noise Pseudomorphic High Electron Mobility Transistors (pHEMT) at room temperature. For this purpose, we used two 0.300 THz sources in order to generate mixing up to 45 GHz.

引用

页数：2

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