Enhanced performance of ultra-thin Cu(In,Ga)Se2 solar cells deposited at low process temperature

被引：37

作者：

Yin, G. ^{[1
]}

Brackmann, V. ^{[2
]}

Hoffmann, V. ^{[2
]}

Schmid, M. ^{[1
,3
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, Nanoopt Concepts PV, D-14109 Berlin, Germany

[2] IFW Dresden, Inst Komplexe Mat, D-270116 Dresden, Germany

[3] Free Univ Berlin, Dept Phys, D-14195 Berlin, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2015年 / 132卷

关键词：

CIGSe; Low process temperature; Ultra-thin; Back Ga grading; FILMS; THICKNESS;

D O I：

10.1016/j.solmat.2014.08.045

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

To investigate the process temperature on the growth of ultra-thin (<= 500 nm) Cu(In,Ga)Se-2 (CIGSe) absorbers and the corresponding performance of solar cells, the process temperature was set to 610 degrees C and 440 degrees C respectively. It was found that the low process temperature (440 degrees C) could reduce the inter-diffusion of Ga-In and thus result in a higher back [Ga]/([Ga]-[In]) ([Ga]/[III]) grading than at the temperature of 610 degrees C. The higher back [Ga]/[III] grading at 440 degrees C was evidenced to both electrically and Optically contribute to the efficiency enhancement of the solar cells in contrast to the lower back [Ga]/[III] grading at 610 degrees C It was also implied that the high back [Ga]/[III] grading was beneficial to the collection of carriers generated from the back-reflected light. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：142 / 147

页数：6

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