MoS2 Quantum Dots: Effect of Hydrogenation on Surface Stability and H2S Release

被引:2
|
作者
Shinde, Prashant P. [1 ]
Adiga, Shashishekar P. [1 ]
Pandian, Shanthi [1 ]
Ramachandran, Sanoop [1 ]
Hariharan, Krishnan S. [1 ]
Kolake, Subramanya M. [1 ]
机构
[1] Samsung R&D Inst, Samsung Adv Inst Technol, Next Gen Res, Bangalore 560037, Karnataka, India
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2019年 / 123卷 / 46期
关键词
COORDINATIVELY UNSATURATED SITES; CHEMICAL-POTENTIAL ANALYSIS; ATOMIC-SCALE STRUCTURE; THIN-FILMS; LAYER; EDGE; HYDRODESULFURIZATION; NANOCLUSTERS; ELECTRONICS; ADSORPTION;
D O I
10.1021/acs.jpcc.8b04198
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We employ density functional theory to investigate effects of hydrogenation on the energetic stability and electronic properties of triangular MoS2 nanoclusters with S-edges. Excess edge sulfur atoms relative to the bulk stoichiometry along the edges are passivated by hydrogen atoms. We find that the hydrogen coverage for maximum stability can be calculated by (n - 2)/2(n - 1), where n is the number of S atoms along an edge. The energetics reveal a preference for the zigzag arrangement of adsorbed hydrogen atoms on the edges. Our calculations show vanishing HOMO-LUMO gaps mainly due to the presence of dangling bonds at the edges and can be considered metal-like. We find that the activation energy required to release H2S lies in between 0.47 and 0.62 eV, and this value is in good agreement with the recently reported experimental value.
引用
收藏
页码:28106 / 28113
页数:8
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