Hypoglycemia-induced seizures reduce cyclic AMP response element binding protein levels in the rat hippocampus

被引:20
|
作者
Panickar, KS [1 ]
Purushotham, K
King, MA
Rajakumar, G
Simpkins, JW
机构
[1] Univ Florida, Dept Pharmacol & Therapeut, Gainesville, FL 32610 USA
[2] Univ Florida, Dept Oral Biol, Gainesville, FL 32610 USA
[3] Univ Florida, Dept Neurosci, Gainesville, FL 32610 USA
[4] Univ Florida, Ctr Neurobiol Aging, Gainesville, FL 32610 USA
[5] Univ Florida, Dept Pharmacodynam, Gainesville, FL 32610 USA
关键词
cAMP response element binding protein (CREB); hippocampus; hypoglycemia; seizure; memory;
D O I
10.1016/S0306-4522(97)00466-1
中图分类号
Q189 [神经科学];
学科分类号
071006 ;
摘要
Cyclic AMP response element binding protein (CREB) is a transcription factor that has been implicated in the activation of protein synthesis required for long-term memory. Since memory deficits are manifest following seizure, we undertook the present study to investigate the effects of hypoglycemia-induced seizure on CREB-immunoreactive neurons in several brain regions. We induced generalized seizures in male Long-Evans rats (n=5) by injecting them with insulin (30 IU/kg, i.p). Animals were recovered by administration of 3 ml of 30% glucose within 5 min of the occurrence of seizure. Control animals (n=3) were injected with saline instead of insulin. All animals were perfused 90 min after recovery and the brains processed for CREB immunohistochemistry. Cell counts were determined for CREB-positive neurons using a computer-assisted program. When compared to control animals there was a 50% decrease (P<0.0001) in CREB-positive neurons in the CAI region of the experimental animals. In the CA3 and dentate gyrus there was a 36% (P<0.001) and 25% decrease (P<0.001), respectively. Given the importance of hippocampus in memory-related processes and evidence that CREB is critical for memory formation, it is possible that seizures interfere with memory by disrupting CREB-dependent transcription. (C) 1998 IBRO. Published by Elsevier Science Ltd.
引用
收藏
页码:1155 / 1160
页数:6
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