Photoresponses of Zinc Tin Oxide Thin-Film Transistor

被引：8
|
作者：
Huang, Wei Lun [1 ,2 ]
Yang, Chen-Chuan [1 ,2 ]
Chang, Sheng-Po [1 ,2 ]
Chang, Shoou-Jinn [1 ,2 ]
机构：
[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Dept Elect Engn, Tainan 70101, Taiwan
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2020年 / 20卷 / 03期
关键词：
Thin-Film Transistor; Zinc Tin Oxide; Ultraviolet Sensor; RF Sputtering; ULTRAVIOLET PHOTODETECTOR; TEMPERATURE;
D O I：
10.1166/jnn.2020.17159
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this study, the optical and electrical properties of a zinc tin oxide (ZTO) thin-film transistor (TFT) were investigated. The TFT was fabricated using ZTO as the active layer, which was deposited by a radio frequency magnetron sputtering system, to form an ultraviolet (UV) photodetector. The device has a threshold voltage of 0.48 V, field-effect mobility of 1.47 cm(2)/Vs in the saturation region, on/off drain current ratio of 2x10(6), and subthreshold swing of 0.45 V/decade in a dark environment. Moreover, as a UV photodetector, the device has a long photoresponse time, responsivity of 0.329 A/W, and rejection ratio of 3.19 x 10(4) at a gate voltage of -15 V under illumination of wavelength 300 nm.
引用
收藏
页码：1704 / 1708
页数：5
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