Electroluminescence measurement of InAlAs/InGaAs HEMTs lattice-matched to InP substrates

被引：0
|
作者：
Shigekawa, N [1 ]
Enoki, T [1 ]
Furuta, T [1 ]
Ito, H [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：681 / 684
页数：4
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