Submicron InP D-HBT single-stage distributed amplifier with 17 dB gain and over 110 GHz bandwidth

被引：22

作者：

Baeyens, Y. ^{[1
]}

Weimann, N. ^{[1
]}

Houtsma, V. ^{[1
]}

Weiner, J. ^{[1
]}

Yang, Y. ^{[1
]}

Frackoviak, J. ^{[1
]}

Roux, P. ^{[1
]}

Tate, A. ^{[1
]}

Chen, Y. K. ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, 600 Mt Ave, Murray Hill, NJ 07974 USA

来源：

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5 | 2006年

关键词：

bipolar transistor amplifiers; distributed amplifiers (DAs); heterojunction bipolar transistors (HBTs);

D O I：

10.1109/MWSYM.2006.249798

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance and compact distributed amplifiers were realized in a 0.5 mu m emitter double-heterojunction InGaAs/InP HBT (D-RBT) technology with a current gain cutoff frequency (f(T)) and a maximum oscillation frequency (f(max)) of 337 and 345 GHz, respectively. A gain of 17 dB with flatness within 1.5 dB was obtained from 45 MHz up to 110 GHz, the highest available measurement frequency. The measured input and output reflection of the amplifier are better than -10 dB up to respectively 100 and 110 GHz. The resulting gain bandwidth product (GBW) is more than 750 GHz which is the highest reported so far for any single-stage amplifiers to our knowledge.

引用

页码：818 / 821

页数：4

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