Tunable Dirac states in doped B2S3 monolayers

被引:1
|
作者
Li, Xiaoteng [1 ]
Zuo, Xi [2 ]
Cui, Bin [3 ]
Zhao, Wenkai [1 ]
Xu, Yuqing [1 ]
Zou, Dongqing [1 ]
Yang, Chuanlu [1 ]
机构
[1] Ludong Univ, Sch Phys & Optoelect Engn, Yantai 264000, Peoples R China
[2] Hubei Normal Univ, Coll Phys & Elect Sci, Huangshi 435002, Hubei, Peoples R China
[3] Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Peoples R China
基金
中国国家自然科学基金;
关键词
The authors are thankful for the financial support from the National Natural Science Foundation of China (Grant No. 12004151 and 11874192); the Natural Science Foundation of Shandong Province (Grant No. ZR2020QA065); and the Taishan Scholar Project of Shandong Province (201511055);
D O I
10.1039/d1cp05693j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Two-dimensional (2D) Dirac materials have been a research hotspot due to their intriguing properties, such as high carrier mobility and ballistic charge transport. Here, we demonstrate that the B2S3 monolayer with a hexagonal structure, which has been reported as a photocatalyst, can be tuned to new 2D Dirac materials by doping atoms. The Young's modulus can reach 65.23 N m(-1), indicating that the monolayer can be used as a buffer materials. The electronic structures of the pristine B2S3 monolayer show that some Dirac points appear but do not occur exactly on the Fermi level (E-F). Fortunately, we find that the Dirac cone can be tuned to the E-F by doping C, N, or Sn atoms. The C-doped B2S3 monolayer can be a half-metallic Dirac material, which has significant potential application in spintronics. For N- and Sn-doped B2S3 monolayers, the typical kagome bands are formed near the E-F, which arise from three molecular orbitals hybridized by B, S, and N (Sn) atoms. These outstanding properties render the doped B2S3 monolayers promising 2D Dirac materials for future nanoelectronic devices.
引用
收藏
页码:10095 / 10100
页数:6
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