Undamped self-oscillations and dynamical chaos under conditions of impurity breakdown of a semiconductor in the fixed-current regime

被引：3

作者：

Kachlishvili, ZS ^{[1
]}

Jandieri, KM ^{[1
]}

机构：

[1] Tbilisi State Univ, Dept Phys, GE-380028 Tbilisi, Georgia

来源：

JETP LETTERS | 1998年 / 67卷 / 05期

关键词：

72.20.My; 61.72.−y;

D O I：

10.1134/1.567674

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is shown theoretically that chaotic oscillations of the Hall field, the Hall constant, and the magnetoresistance appear in a compensated semiconductor under impurity breakdown conditions. It is shown that the transition to chaos occurs via the Feigenbaum scenario. (C) 1998 American Institute of Physics. [S0021-3640(98)01105-0].

引用

页码：358 / 362

页数：5

共 8 条

[1] Undamped self-oscillations and dynamical chaos under conditions of impurity breakdown of a semiconductor in the fixed-current regime
Z. S. Kachlishvili
K. M. Jandieri
[J]. Journal of Experimental and Theoretical Physics Letters, 1998, 67 : 358 - 362
[2] Undamped self-oscillations in a compensated semiconductor under conditions of impurity breakdown in the presence of a magnetic field
Jandieri, KM
Kachlishvili, ZS
[J]. TECHNICAL PHYSICS LETTERS, 1997, 23 (08) : 643 - 644
[3] Undamped self-oscillations in a compensated semiconductor under conditions of impurity breakdown in the presence of a magnetic field
K. M. Jandieri
Z. S. Kachlishvili
[J]. Technical Physics Letters, 1997, 23 : 643 - 644
[4] Current self-oscillations and chaos in semiconductor superlattices
Grahn, HT
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1999, 25 (1-2) : 7 - 11
[5] Dynamic chaos in a partially illuminated compensated semiconductor under the conditions of impurity-related breakdown
Jandieri, KM
Kachlishvili, ZS
Stroganov, AB
[J]. SEMICONDUCTORS, 2005, 39 (06) : 642 - 649
[6] Dynamic chaos in a partially illuminated compensated semiconductor under the conditions of impurity-related breakdown
K. M. Jandieri
Z. S. Kachlishvili
A. B. Stroganov
[J]. Semiconductors, 2005, 39 : 642 - 649
[7] INFLUENCE OF SCREENING OF IMPURITY POTENTIAL ON CURRENT-VOLTAGE CHARACTERISTIC OF A SEMICONDUCTOR UNDER IMPURITY BREAKDOWN CONDITIONS
ZAITSEV, AN
ZVEZDIN, AK
OSIPOV, VV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 1941 - +
[8] REDUCTION OF 137CS EMISSION INTO THE ATMOSPHERE ON COMBUSTION OF A RADIONUCLIDE-CONTAMINATED SOLID FUEL UNDER CONDITIONS INVOLVING EXCITATION OF THERMOACOUSTIC SELF-OSCILLATIONS AND GAS-DYNAMICAL PULSATIONS
Polezhaev, Yu V.
Geshele, V. D.
Stonik, O. G.
Raskatov, I. P.
Solov'ev, V. N.
Pleshchankov, I. G.
Bida, L. A.
Levchuk, A. S.
Fokina, G. I.
[J]. JOURNAL OF ENGINEERING PHYSICS AND THERMOPHYSICS, 2015, 88 (02) : 374 - 381

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