INFLUENCE OF SCREENING OF IMPURITY POTENTIAL ON CURRENT-VOLTAGE CHARACTERISTIC OF A SEMICONDUCTOR UNDER IMPURITY BREAKDOWN CONDITIONS

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作者：

ZAITSEV, AN

ZVEZDIN, AK

OSIPOV, VV

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1971年 / 4卷 / 12期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：1941 / +

页数：1

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