Novel soluble pentacene and anthradithiophene derivatives for organic thin-film transistors

被引:58
|
作者
Kim, Choongik [2 ,3 ]
Huang, Peng-Yi [1 ]
Jhuang, Jhe-Wei [1 ]
Chen, Ming-Chou [1 ]
Ho, Jia-Chong [4 ]
Hu, Tarng-Shiang [4 ]
Yan, Jing-Yi [4 ]
Chen, Liang-Hsiang [4 ]
Lee, Gene-Hsiang [5 ]
Facchetti, Antonio [2 ,3 ]
Marks, Tobin J. [2 ,3 ]
机构
[1] Natl Cent Univ, Dept Chem, Jhongli 32054, Taiwan
[2] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[3] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
[4] Ind Technol Res Inst, Hsinchu, Taiwan
[5] Natl Taiwan Univ, Instrumentat Ctr, Taipei 10660, Taiwan
关键词
Organic thin-film transistor; Organic semiconductor; Solution-process; Pentacene; Anthradithiophene; FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; FUNCTIONALIZED PENTACENE; SUBSTITUTED PENTACENE; GATE DIELECTRICS; ACENES; SEMICONDUCTOR; ELECTRON; MOBILITY; STABILITY;
D O I
10.1016/j.orgel.2010.04.029
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Four new solution-processable pentacene- (PEN) and anthradithiophene- (ADT) based organic semiconductors bearing two phenylethynyl (PE-) or triethylsilylphenylethynyl (TESPE-) substituents have been synthesized, characterized, and incorporated in thin-film transistors (TFTs). The molecular structures of these four materials have been determined by single-crystal X-ray diffraction. Thin films of all four compounds have been fabricated via drop-casting and exhibited p-channel OTFT transport with hole mobilities as high as similar to 0.01 cm(2)/V s. Compared to PEN derivatives, ADT-based compounds exhibited superior device performance and photooxidative stability in ambient. The film morphologies and microstructures of these compounds have been characterized by optical microscopy and X-ray diffraction to rationalize device performance trends. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:1363 / 1375
页数:13
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