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Novel soluble pentacene and anthradithiophene derivatives for organic thin-film transistors
被引:58
|作者:
Kim, Choongik
[2
,3
]
Huang, Peng-Yi
[1
]
Jhuang, Jhe-Wei
[1
]
Chen, Ming-Chou
[1
]
Ho, Jia-Chong
[4
]
Hu, Tarng-Shiang
[4
]
Yan, Jing-Yi
[4
]
Chen, Liang-Hsiang
[4
]
Lee, Gene-Hsiang
[5
]
Facchetti, Antonio
[2
,3
]
Marks, Tobin J.
[2
,3
]
机构:
[1] Natl Cent Univ, Dept Chem, Jhongli 32054, Taiwan
[2] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[3] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
[4] Ind Technol Res Inst, Hsinchu, Taiwan
[5] Natl Taiwan Univ, Instrumentat Ctr, Taipei 10660, Taiwan
关键词:
Organic thin-film transistor;
Organic semiconductor;
Solution-process;
Pentacene;
Anthradithiophene;
FIELD-EFFECT TRANSISTORS;
HIGH-PERFORMANCE;
FUNCTIONALIZED PENTACENE;
SUBSTITUTED PENTACENE;
GATE DIELECTRICS;
ACENES;
SEMICONDUCTOR;
ELECTRON;
MOBILITY;
STABILITY;
D O I:
10.1016/j.orgel.2010.04.029
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Four new solution-processable pentacene- (PEN) and anthradithiophene- (ADT) based organic semiconductors bearing two phenylethynyl (PE-) or triethylsilylphenylethynyl (TESPE-) substituents have been synthesized, characterized, and incorporated in thin-film transistors (TFTs). The molecular structures of these four materials have been determined by single-crystal X-ray diffraction. Thin films of all four compounds have been fabricated via drop-casting and exhibited p-channel OTFT transport with hole mobilities as high as similar to 0.01 cm(2)/V s. Compared to PEN derivatives, ADT-based compounds exhibited superior device performance and photooxidative stability in ambient. The film morphologies and microstructures of these compounds have been characterized by optical microscopy and X-ray diffraction to rationalize device performance trends. (C) 2010 Elsevier B.V. All rights reserved.
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页码:1363 / 1375
页数:13
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