Photoluminescence from silicon nano-particles synthesized by laser-induced decomposition of silane

This work deals with photoluminescence study of silicon nanoparticles produced by CO2-laser-induced decomposition of SiH4 mixed to helium in a controlled atmosphere reactor. By adjusting the pressure of both reactor and precursor gas and its dilution rate in helium, we were able to control, to a certain extent, the silicon growth rate and hence the particle diameter. This latter was determined by both small angle neutron scattering techniques and high resolution transmission electron microscopy observations. Particles with mean diameter ranging between 3 and 10 nm were submitted to photoluminescence and infrared absorption spectroscopy measurements. The photoluminescence spectra revealed two main peaks at about 1.7 and 2.1 eV. The peak position of the former was insensitive to the change of particle size, while its intensity increased after oxidation. The latter showed, however, a slight size dependence but had undergone a drastic decrease after oxidation. These features enabled us to ascribe the red peak (1.7 eV) to some radiative surface defect, while the yellow peak (2.1 eV) appeared consistent with an emission from an oxygen-related defect such as the nonbridging oxygen hole center. (C) 2000 American Institute of Physics. [S0021- 8979(00)04318-8].