Discovery of hyperbolic excitons in layered semiconductor BiI3

被引：1
|
作者：
Virko, SV [1 ]
Lisitsa, MP [1 ]
Motsnyi, FV [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252028 Kiev, Ukraine
来源：
PHYSICS OF THE SOLID STATE | 2000年 / 42卷 / 09期
关键词：
Spectroscopy; State Physics; Main Parameter; Layered Semiconductor; BiI3;
D O I：
10.1134/1.1309440
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Hyperbolic excitons have been detected in layered semiconductor BiI3. Their main parameters have been evaluated. (C) 2000 MAIK "Nauka/Interperiodica".
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页码：1622 / 1624
页数：3
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