Growth of M-plane GaN(1(1)over-bar-00): A way to evade electrical polarization in nitrides

被引：0
|
作者：
Waltereit, P
Brandt, O
Ramsteiner, M
Trampert, A
Grahn, HT
Menniger, J
Reiche, M
Uecker, R
Reiche, P
Ploog, KH
机构：
[1] Paul Drude Inst Festkorperelekt, D-10177 Berlin, Germany
[2] Inst Kristallzuchtung, D-12489 Berlin, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2000年 / 180卷 / 01期
关键词：
D O I：
10.1002/1521-396X(200007)180:1<133::AID-PSSA133>3.0.CO;2-A
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the growth of M-plane GaN(1 (1) over bar 00) on gamma-LiAlO(2)(100) by molecular beam epitaxy. The crystal orientation and structural properties of buffer layers are examined by means of reflection high-energy electron diffraction, high-resolution transmission electron microscopy, X-ray diffraction, Raman scattering, and atomic force microscopy. The layers are shown to be single-phase GaN(1 (1) over bar 00) within the measurements' sensitivity. In contrast to the ubiquitous C-plane GaN[0001] orientation, the M-plane of wurtzite nitrides is free of electrical polarization. This is experimentally verified for (Al,Ga)N/GaN heterostructures by continuous-wave and time-resolved luminescence.
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页码：133 / 138
页数：6
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