Electron injection-induced effects in III-nitrides

被引：0
|
作者：
Chernyak, L [1 ]
机构：
[1] Univ Cent Florida, Orlando, FL 32816 USA
来源：
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXVI AND WIDE BANDGAP SEMICONDUCTORS FOR PHOTONIC AND ELECTRONIC DEVICES AND SENSORS II | 2002年 / 2002卷 / 03期
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中图分类号：
R5 [内科学];
学科分类号：
1002 ; 100201 ;
摘要：
Application of a forward bias in GaN-based solid state devices - p-n junctions and Schottky barriers - leads to a significant increase of minority carrier diffusion length and lifetime. Consistent changes were observed in material optoelectronic properties, including spectral photoresponse, and were attributed to charging of deep metastable Mg-acceptor-related centers.
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页码：178 / 183
页数：6
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