High density plasma damage induced in n-GaN Schottky diodes using Cl2/Ar discharges

被引：0
|
作者：
Zhang, AP [1 ]
Dang, G
Ren, F
Cao, XA
Cho, H
Lambers, ES
Pearton, SJ
Shul, RJ
Zhang, L
Baca, AG
Hickman, R
Van Hove, JM
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] Sandia Natl Labs, Albuquerque, NM 87185 USA
[4] SVT Associates, Eden Prairie, MN 55344 USA
来源：
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 2000年 / 5卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of de chuck self-bias and high density source power (which predominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively Coupled Plasma of Cl-2/Ar were examined. Both parameters were found to influence the diode performance, by reducing the reverse breakdown voltage and Schottky barrier height. All plasma conditions were found to produce a nitrogen-deficient surface, with a typical depth of the non-stoichiometry being similar to 500 Angstrom. Post-etch annealing was found to partially restore the diode characteristics.
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页数：6
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