Integer and half-integer quantum Hall effect in silicene: Influence of an external electric field and impurities

被引:32
|
作者
Shakouri, Kh. [1 ]
Vasilopoulos, P. [2 ]
Vargiamidis, V. [2 ]
Peeters, F. M. [1 ]
机构
[1] Univ Antwerp, Dept Fys, B-2020 Antwerp, Belgium
[2] Concordia Univ, Dept Phys, Montreal, PQ H4B 1R6, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
DIRAC FERMIONS;
D O I
10.1103/PhysRevB.90.235423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of silicene's strong spin-orbit interaction and of an external electric field E-z on the transport coefficients are investigated in the presence of a perpendicular magnetic field B. For finite E-z the spin and valley degeneracy of the Landau levels is lifted and leads to additional plateaus in the Hall conductivity, at half-integer values of 4e(2)/h, due to spin intra-Landau-level transitions that are absent in graphene. These plateaus are more sensitive to disorder and thermal broadening than the main plateaus, occurring at integral values of 4e(2)/h, when the Fermi level passes through the Landau levels. We also evaluate the Hall and longitudinal resistivities and critically contrast the results with those for graphene on a substrate.
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页数:9
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