Structural characterization of MgO/c-Al2O3 interfaces

被引：2
|
作者：
Minegishi, T. [1 ]
Hanada, T. [1 ]
Suzuki, H.
Vashaei, Z.
Oh, D. C.
Sumitani, K. [2 ,3 ]
Sakata, O. [2 ]
Cho, M. W. [1 ]
Yao, T. [1 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808578, Japan
[2] Japan Synchrotron Radiat Res Inst, Sayo, Hyogo 6795189, Japan
[3] Kyushu Synchrotron Light Res Ctr, Tosu, Saga 8410005, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 | 2007年 / 4卷 / 05期
基金：
日本学术振兴会;
关键词：
D O I：
10.1002/pssc.200674275
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have found that MgO deposited on c-Al2O3 substrates at high temperatures formed MgAl2O4 by interdiffusion during MgO layer growth, The formation of spinel MgAl2O4 has been confirmed by in-situ reflection high energy electron diffraction (RHEED) and grazing incident X-ray diffracition (GIXD). The critical temperature (T-C) for the formation of MgAl2O4 was found to be around 700 degrees C above which MgAl2O4 is formed at the MgO/c-Al2O3 interface. (c) 2007 WILEY-VCH Verlag GmbH &,Co. KGaA, Weinheim.
引用
收藏
页码：1715 / +
页数：2
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