A 2.6GHz Class-AB GaN Power Amplifier with Maximum Output Power of 56W Achieving 70% Power Added Efficiency

被引：0

作者：

Chen, Zeqiang ^{[1
]}

Li, Ken ^{[1
]}

Jin, Kai ^{[1
]}

Huang, Chenxi ^{[1
]}

Li, Peng ^{[1
]}

Geng, Li ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China

来源：

2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA) | 2018年

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

GaN; power amplifier; high efficiency;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A 2.6GHz class-AB power amplifier (PA) based on GaN transistor is presented. The PA achieves nearly 200MHz bandwidth while maintaining optimal performance. All matching networks are realized by cascade trapezoidal transmission lines, which are designed by an equivalent series strip line model. A paralleled RC tank is placed at the beginning of input and a resistor is placed at the bias path to adjust the stability of PA, which make PA keep stable at the specified frequency range. Results show that the designed PA achieves a maximum 19dB power gain and 56W maximum output power with 70% power added efficiency (PAE).

引用

页码：328 / 331

页数：4

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