Suspended SOI waveguide with sub-wavelength grating cladding for mid-infrared

被引:102
|
作者
Penades, J. Soler [1 ]
Alonso-Ramos, C. [2 ]
Khokhar, A. Z. [1 ]
Nedeljkovic, M. [1 ]
Boodhoo, L. A. [3 ]
Ortega-Monux, A. [2 ]
Molina-Fernandez, I. [2 ]
Cheben, P. [4 ]
Mashanovich, G. Z. [1 ]
机构
[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
[2] Univ Malaga, Dept Ingn Comunicac, E-29071 Malaga, Spain
[3] Univ Southampton, Southampton SO17 1BJ, Hants, England
[4] Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada
基金
英国工程与自然科学研究理事会;
关键词
SILICON-ON-INSULATOR; RING-RESONATOR; COUPLER; DEVICES;
D O I
10.1364/OL.39.005661
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present a new type of mid-infrared silicon-on-insulator (SOI) waveguide. The waveguide comprises a sub-wavelength lattice of holes acting as lateral cladding while at the same time allowing for the bottom oxide (BOX) removal by etching. The waveguide loss is determined at the wavelength of 3.8 mu m for structures before and after being underetched using both vapor phase and liquid hydrofluoric acid (HF). A propagation loss of 3.4 dB/cm was measured for a design with a 300 nm grating period and 150 nm holes after partial removal (560 nm) of BOX by vapor phase HF etching. We also demonstrate an alternative design with 550 nm period and 450 nm holes, which allows a faster and complete removal of the BOX by liquid phase HF etching, yielding the waveguide propagation loss of 3.6 dB/cm. (C) 2014 Optical Society of America
引用
收藏
页码:5661 / 5664
页数:4
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