THM growth and characterization of CuGaxIn1-xSe2 solid solutions

被引:4
|
作者
Miyake, H [1 ]
Haginoya, T [1 ]
Sugiyama, K [1 ]
机构
[1] Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 514, Japan
关键词
THM growth; CuGaxIn1-xSe2; solid solutions;
D O I
10.1016/S0927-0248(97)00117-7
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Growth of CuGaxIn1-xSe2 single crystals by THM (traveling heater method) has been investigated. On the basis of the relation between the composition x of grown crystal CuGaxIn1-xSe2 and y of CuGayIn1-ySe2 solute in 60 mol% In solution, THM growth of CuGaxIn1-xSe2 (x = 0, 0.2, 0.4, 0.7, 1) was performed using a zone ingot which was prepared in advance. Bulk single crystals with 10 mm in diameter and 20-30 mm in length have been obtained by the THM growth, and their electrical and optical properties have been studied.
引用
收藏
页码:51 / 56
页数:6
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