THM growth and characterization of CuGaxIn1-xSe2 solid solutions

被引：4

作者：

Miyake, H ^{[1
]}

Haginoya, T ^{[1
]}

Sugiyama, K ^{[1
]}

机构：

[1] Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 514, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1998年 / 50卷 / 1-4期

关键词：

THM growth; CuGaxIn1-xSe2; solid solutions;

D O I：

10.1016/S0927-0248(97)00117-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Growth of CuGaxIn1-xSe2 single crystals by THM (traveling heater method) has been investigated. On the basis of the relation between the composition x of grown crystal CuGaxIn1-xSe2 and y of CuGayIn1-ySe2 solute in 60 mol% In solution, THM growth of CuGaxIn1-xSe2 (x = 0, 0.2, 0.4, 0.7, 1) was performed using a zone ingot which was prepared in advance. Bulk single crystals with 10 mm in diameter and 20-30 mm in length have been obtained by the THM growth, and their electrical and optical properties have been studied.

引用

页码：51 / 56

页数：6

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