Raman scattering of a porous silicon superlattice

被引：0
|
作者：
Cho, CH [1 ]
Seo, YS
Park, JD
Kim, YY
Lee, KW
机构：
[1] Paichai Univ, Dept Phys, Taejon 302735, South Korea
[2] Kongju Natl Univ, Dept Phys, Kongju 314701, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2000年 / 37卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The Raman spectra were measured for a porous silicon superlattice, which was formed by periodic variation of the formation current density or the etching time. As the layers increased periodically the optical phonon modes shifted about 3 cm(-1) from 520 cm(-1), and the full width at half maximum increased.
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收藏
页码：770 / 773
页数：4
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