Investigation of porous silicon wetting by Raman scattering

被引：0
|
作者：
Ferrara, M. A. [1 ,2 ]
Donato, M. G. [2 ]
Sirleto, L. [1 ]
Messina, G. [2 ]
Santangelo, S. [2 ]
Rendina, I. [1 ]
机构：
[1] CNR, Inst Microelect & Microsyst, I-80131 Naples, Italy
[2] Univ Mediterranea, Reggio Di Calabria, Italy
来源：
SPECTROSCOPY LETTERS | 2008年 / 41卷 / 04期
关键词：
porous silicon; Raman scattering; wetting phenomena;
D O I：
10.1080/00387010802132391
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
Wetting phenomena in porous silicon layers are experimentally investigated by Raman scattering. The experimental results show a reversible blue-shift of Raman spectra of wetted porous silicon layers with respect to the unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the porous silicon layer and the bulk silicon substrate in wetting conditions.
引用
收藏
页码：174 / 178
页数：5
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