Monolithic integration of GaAs devices with completely fabricated SiCMOS circuits

被引：0
|
作者：
Ma, K [1 ]
Chen, R [1 ]
Miller, DAB [1 ]
Harris, JS [1 ]
机构：
[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA
来源：
2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2004年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
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页码：230 / 231
页数：2
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