Growth of Zn1-xMgxO and Zn1-xCdxO Nanowires and the Application in Light Emitting Devices

Magnesium and Cadmium doped ZnO nanowires were successfully grown by Chemical Vapor deposition method in a tube furnance. Photoluminescence spectra show that the band gap of ZnO nanowire has been tuned from 4.00 eV to 2.08 eV by Magnesium and Cadmium doping. Transmission Electron Microscopy and X-ray diffraction characterization analysis indicate that most of the formed nanowires are single crystalline with good quality. Zn1-xCdxO nanowire sample was used for heterojunctional light emitting diode fabrication. Electroluminescence measurement yields a strong emission peak at 553 nm from the Zn1-xCdxO nanowire.