Optical phonon localization in self-assembled Ge islands

被引：0
|
作者：
Yang, TR
Dvoynenko, MM
Cheng, HH
机构：
[1] Natl Taiwan Normal Univ, Dept Phys, Taipei 117, Taiwan
[2] Natl Taiwan Univ, Ctr Condensed Matter, Taipei, Taiwan
来源：
PHYSICA B-CONDENSED MATTER | 2003年 / 329卷
关键词：
Ge dots; optical phonons; Raman spectroscopy; localization;
D O I：
10.1016/S0921-4526(02)02254-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present a Raman scattering study for self-organized Ge islands on Si substrate carried out at 10 K. By means of difference Raman spectroscopy technique, we have separated the Raman signals from the Ge islands and Si substrate. The wetting layer thickness and strain were estimated from the line width and frequency peak. The estimated wetting layer thickness values are comparative. with the Ge dot height obtained from microscopy measurements. The strain is decreased with an increase of the thickness. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1302 / 1303
页数：2
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