Patterning with 193 nm resists

被引：0

作者：

Bakshi, V ^{[1
]}

Smith, G ^{[1
]}

Alzaben, T ^{[1
]}

Beach, J ^{[1
]}

Spurlock, K ^{[1
]}

Berger, R ^{[1
]}

Dorris, ST ^{[1
]}

Pearson, S ^{[1
]}

Holladay, D ^{[1
]}

Woehl, J ^{[1
]}

机构：

[1] Int SEMATECH Inc, Adv Technol Dev Facil, Austin, TX 78741 USA

来源：

THIN FILM MATERIALS, PROCESSES, AND RELIABILITY | 2001年 / 2001卷 / 24期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

At present, the semiconductor industry plans to use 193 urn technology for patterning in the 130 to 100 run nodes. Patterning with 193 technology has several challenges in the litho and etch areas. At the Advanced Technology Development Facility (ATDF) of International SEMATECH, we have benchmarked various 193 mn resists for their patterning capabilities. We have also developed production worthy patterning processes for 130 nm contacts and <100 run trenches to support various internal development projects. This paper presents the results of benchmarking and process development for three 193 nm resists.

引用

页码：31 / 41

页数：11

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