A CMOS Wideband Low Noise Mixer for LTE Application

被引:0
|
作者
Hidayov, Olim A. [1 ]
Lee, Sang-Gug [2 ]
机构
[1] CAC RF Res, Analog Devices, Berlin, Germany
[2] Korea Adv Inst Sci & Technol, NICE Lab, Seoul, South Korea
关键词
LTE; CMOS; Gilbert cell; mixer; low noise; wideband; AMPLIFIER; LNA;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a wideband CMOS down-conversion mixer for Long Term Evolution applications. The Gilbert cell mixer, which is designed to operate from 0.7 to 2.7 GHz range, employs a capacitive cross-coupled common-gate (CCC-CG) in combination with a current-bleeding PMOS common-source topology as a transconductance stage for wideband input matching, higher gain, and the noise and distortion cancellation. Inter-stage peaking inductors are also adopted for bandwidth extension. Implemented in a 0.13 um CMOS, measurements show the conversion gain of 27 dB, double side-band noise figure of 3.3 dB, and maximum IIP3 of +7 dBm while dissipating 5.6 mA from 1.2 V supply.
引用
收藏
页码:41 / 44
页数:4
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