A CMOS Wideband Low Noise Mixer for LTE Application

被引：0

作者：

Hidayov, Olim A. ^{[1
]}

Lee, Sang-Gug ^{[2
]}

机构：

[1] CAC RF Res, Analog Devices, Berlin, Germany

[2] Korea Adv Inst Sci & Technol, NICE Lab, Seoul, South Korea

来源：

2020 15TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2021年

关键词：

LTE; CMOS; Gilbert cell; mixer; low noise; wideband; AMPLIFIER; LNA;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a wideband CMOS down-conversion mixer for Long Term Evolution applications. The Gilbert cell mixer, which is designed to operate from 0.7 to 2.7 GHz range, employs a capacitive cross-coupled common-gate (CCC-CG) in combination with a current-bleeding PMOS common-source topology as a transconductance stage for wideband input matching, higher gain, and the noise and distortion cancellation. Inter-stage peaking inductors are also adopted for bandwidth extension. Implemented in a 0.13 um CMOS, measurements show the conversion gain of 27 dB, double side-band noise figure of 3.3 dB, and maximum IIP3 of +7 dBm while dissipating 5.6 mA from 1.2 V supply.

引用

页码：41 / 44

页数：4

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