CMOS image sensor 3T Nwell photodiode pixel spice model

被引:6
|
作者
Reiner, T
Mishori, B
Leitner, T
Horovitz, A
Vainbaum, Y
Hakim, M
Lahav, A
Shapira, S
Fenigstein, A
机构
关键词
D O I
10.1109/EEEI.2004.1361114
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
CMOS image sensor pixel design requires accurate spice modeling to determine pixel performance. In this work, a standard Nwell/Psub phototiode with a 3 transistor pixel has been modeled using Cadence SPECTRE spice simulator fabricated using a conventional 0.18um CMOS process technology. Pixel parameters such as voltage swing, clock feedthrough and pixel capacitances have been modeled using silicon based measurements of individuals components. These components include reset source region, Nwell photodiode and source follower gate capacitances. In addition, non-linear effects of the photodiode and source follower are included in the model. The accuracy of the model agrees well with measured pixel transient response.
引用
收藏
页码:161 / 164
页数:4
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