Resonance Raman scattering in high-quality ZnTe epilayers grown by hot-wall epitaxy

被引：0
|
作者：
Nam, S [1 ]
Rhee, J
O, BS
Lee, KS
Choi, YD
机构：
[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[2] Mokwon Univ, Dept Phys, Taejon 301729, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1998年 / 32卷 / 01期
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D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Resonant Raman scattering spectra for high-quality ZnTe epilayers grown by hot-wall epitaxy have been studied extensively. With a 514.5-nm Ar-ion laser as the excitation source, three resonant Raman lines were observed. The temperature characteristics of these three Raman lines were related to those of the energy gap of ZnTe. Also, it was confirmed that the strain which remained in the ZnTe/GaAs epilayers was tensile due to the different thermal expansion coefficients.
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页码：82 / 86
页数：5
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