A systematic investigation on structural and optical properties of sol-gel spin coating fabricated CdS nanocrystalline thin films: effect of Ni doping

被引:5
|
作者
Sharma, Brijlata [1 ]
Lalwani, Rajesh [1 ]
Das, Ruby [1 ]
Raghuwanshi, Devi Singh [2 ]
机构
[1] Bhilai Inst Technol, Dept Appl Phys, Durg 491001, CG, India
[2] Dept Phys, Shri Shankaracharya Tech Campus, Bhilai 490020, CG, India
关键词
DOPED CDS; QUANTUM DOTS; ELECTRICAL-PROPERTIES; SPRAY-PYROLYSIS; PHOTOLUMINESCENCE;
D O I
10.1007/s10854-021-06606-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the present work, we have successfully fabricated undoped and Ni-doped nanocrystalline CdS thin film on an ultrasonically cleaned glass substrate employing the sol-gel spin coating technique. The structural and spectroscopic properties of the films were investigated using XRD spectra, UV-Vis spectroscopy and photoluminescence spectra, respectively. The X-ray diffraction spectra revealed the polycrystalline nature of films with cubic structure and (111) as preferred orientation. The average crystallite size evaluated by the Debye-Scherrer formula lying in the range of 6-12 nm for the deposited films. According to UV-VIS Spectroscopy, the average transmittance of films in the visible region varies between 70-90%. The optical band gap of CdS thin film was evaluated from absorption spectra. The bandgap of the deposited films is in the range of 2.48-2.70 eV which is higher than that of bulk CdS (2.42 eV). This verifies the blue shifting in band edge of CdS nanocrystalline thin films due to the quantum confinement effect. Photoluminescence spectra of the thin film showed that the fundamental band edge emission peak centred at 485 nm also called blue band emission. It is observed that the low temperature resistivity of the films was in the range of 10(7)-10(3 )ohm cm and also found to decrease with increasing Ni concentration, as a result from dc two probe measurements.
引用
收藏
页码:20903 / 20911
页数:9
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