In-plane electrostatically-actuated RF MEMS switch suspended on a low-resistivity substrate

被引：5

作者：

Girbau, David ^{[1
]}

Pradell, Lluis ^{[1
]}

Lazaro, Antonio ^{[2
]}

Nebot, Alvar ^{[1
]}

机构：

[1] Univ Politecn Cataluna, Signal Theory & Commun Dept, ES-08034 Barcelona, Spain

[2] Univ Rovira & Virgili, Dept Elect Elect & Automat Engn, Tarragona 43007, Spain

来源：

2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE | 2006年

关键词：

MEMS; interdigital actuation; in-plane actuation; low-resistivity substrate; leverage bending;

D O I：

10.1109/EMICC.2006.282694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a lateral, resistive-contact electrostatic allymactuated RF MEMS switch for ground wireless communication applications, is presented. It has been manufactured on a low-resistivity substrate, and its RF performance has been improved by suspending the structures 25 pm apart from the substrate. Measured insertion loss, return loss and isolation are -0.13, -38 and -60 dB at 0.9 GHz, and -0.4, -28.7 and -31 dB at 6 GRz, respectively. These results demonstrate the potential feasibility of integrating RF MEMS lateral switches with active circuitry manufactured on low-resistivity substrate under a Systern-on-Chip concept, while keeping their performance.

引用

页码：505 / +

页数：2

共 39 条

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