Valence electron energy-loss spectroscopy of ultrathin SrTiO3 films grown on silicon (100) single crystal

被引：7

作者：

Su, Dong ^{[1
]}

Yang, Bo ^{[2
]}

Jiang, Nan ^{[2
]}

Sawicki, M. ^{[3
]}

Broadbridge, C. ^{[3
]}

Couillard, M. ^{[4
,5
]}

Reiner, J. W. ^{[6
,7
]}

Walker, F. J. ^{[6
,7
]}

Ahn, C. H. ^{[6
,7
]}

Zhu, Yimei ^{[1
]}

机构：

[1] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[3] So Connecticut State Univ, Dept Phys, New Haven, CT 06515 USA

[4] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada

[5] McMaster Univ, Canadian Ctr Electron Microscopy, Hamilton, ON L8S 4L7, Canada

[6] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[7] Yale Univ, Ctr Res Interface Struct & Phenomena, New Haven, CT 06520 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 12期

关键词：

density functional theory; effective mass; electron energy loss spectra; red shift; silicon; strontium compounds; surface plasmons; valence bands; INTERFACE; PLASMONS; SURFACE; BATIO3; OXIDES; SI;

D O I：

10.1063/1.3364144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Valence electron energy-loss spectroscopy is used to investigate the plasmon excitations of ultrathin SrTiO3 sandwiched between amorphous Si and crystalline Si. Two plasmon excitations were observed, one at 15.8 eV and the other at 28.7 eV. Our calculations, based on dielectric-function theory, suggest that the former peak originates from the coupling of the Si layers and is related to the geometry of the structure, and the latter peak results from the SrTiO3 bulk plasmon after a redshift. Our findings demonstrate the value of valence electron energy-loss spectroscopy in detecting a local change in the effective electron mass.

引用

页数：3

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