Plasmonic Hot-Carrier-Mediated Tunable Photochemical Reactions

被引:79
|
作者
Zhang, Yu [1 ,2 ]
Nelson, Tammie [1 ]
Tretiak, Sergei [1 ]
Guo, Hua [3 ]
Schatz, George C. [2 ]
机构
[1] Los Alamos Natl Lab, Div Theoret, Phys & Chem Mat, Los Alamos, NM 87545 USA
[2] Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
[3] Univ New Mexico, Dept Chem & Chem Biol, Albuquerque, NM 87131 USA
关键词
plasmonics; charge transfer; hot carriers; photocatalysis; plasmonic energy conversion; H-2; dissociation; ELECTRON-TRANSFER; CHARGE-CARRIERS; INDUCED DISSOCIATION; METAL NANOPARTICLES; QUANTUM PLASMONICS; SOLAR-CELLS; SURFACE; PHOTOCATALYSIS; NANOSTRUCTURES; CONVERSION;
D O I
10.1021/acsnano.8b03830
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Hot-carrier generation from surface plasmon decay has found applications in many branches of physics, chemistry, materials science, and energy science. Recent reports demonstrated that the hot carriers generated from plasmon decay in nanoparticles can transfer to attached molecules and drive photochemistry which was thought impossible previously. In this work, we have computationally explored the atomic-scale mechanism of a plasmonic hot-carrier-mediated chemical process, H-2 dissociation. Numerical simulations demonstrate that, after photoexcitation, hot carriers transfer to the antibonding state of the H-2 molecule from the nanoparticle, resulting in a repulsive-potential-energy surface and H-2 dissociation. This process occurs when the molecule is close to a single nanoparticle. However, if the molecule is located at the center of the gap in a plasmonic dimer, dissociation is suppressed due to sequential charge transfer, which efficiently reduces occupation in the antibonding state and, in turn, reduces dissociation. An asymmetric displacement of the molecule in the gap breaks the symmetry and restores dissociation when the additional charge transfer is significantly suppressed. Thus, these models demonstrate the possibility of structurally tunable photochemistry via plasmonic hot carriers.
引用
收藏
页码:8415 / 8422
页数:8
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