Terahertz responses of high-Tc ramp-type junctions on MgO

被引：0
|
作者：
Myoren, H
Chen, J
Nakajima, K
Yamashita, T
Blank, DHA
Rogalla, H
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 98077, Japan
[2] Univ Twente, Low Temp Div, NL-7500 AE Enschede, Netherlands
来源：
APPLIED SUPERCONDUCTIVITY 1997, VOLS 1 AND 2: VOL 1: SMALL SCALE AND ELECTRONIC APPLICATIONS; VOL 2: LARGE SCALE AND POWER APPLICATIONS | 1997年 / 158期
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We successfully fabricated the high-T-c ramp-type junctions with PrBa2Cu3-xGaxO7-delta (PBCGO:x=0.1, 0.4) barriers on MgO substrates. The junctions showed RSJ-like I-V curves with increased thermally and voltage activated conductivity. The IcRn products for these junctions scale very well with the Ga-doping. Using far infrared laser radiations, we confirmed terahertz (THz) responses of these junctions. The junction with PBCGO (x=0.4) had IcRn products of similar to 1mV at 4.2K and showed Shapiro steps with THz-wave irradiation, without any additional antenna structure.
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页码：385 / 388
页数：4
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