Polarized Light-emitting Diode with Its InGaN/GaN Quantum Well Coupled with Surface Plasmons on a Metal Grating

被引：0
|
作者：
Chen, Cheng-Yen [1 ]
Shen, Kun-Ching [1 ]
Wang, Jyh-Yang [1 ]
Chen, Hung-Lu [1 ]
Huang, Chi-Feng [1 ]
Kiang, Yean-Woei [1 ]
Yang, C. C. [1 ]
机构：
[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10617, Taiwan
来源：
2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 | 2009年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The enhanced and partially polarized output of a green light-emitting diode, in which its InGaN/GaN quantum well couples with surface plasmons on an Ag grating structure, is demonstrated by comparing with the conventionally fabricated devices. 2009 Optical Society of America
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页码：618 / +
页数：2
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