The Direct Insulator-Quantum Hall Transition

被引：3
|
作者：
Liang, Chi-Te [1 ,2 ]
Lo, Shun-Tsung [3 ]
机构：
[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
[2] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea
[3] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 106, Taiwan
来源：
CHINESE JOURNAL OF PHYSICS | 2014年 / 52卷 / 04期
关键词：
FIELD-INDUCED DELOCALIZATION; PHASE-DIAGRAM; SPIN; CONDUCTIVITY; UNIVERSALITY;
D O I：
10.6122/CJP.52.1175
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The direct insulator-quantum Hall (I-QH) transition corresponds to a transition from an insulator to a high Landau-level-filling factor nu > 2 QH state, which is characterized by an approximately temperature T-independent longitudinal resistance of a few nm thick electron (or hole) layer. In this paper, we review both the experimental and theoretical results on the direct I-QH transition. In particular, we attempt to address several interesting yet unsettled issues in the field of the direct I-Q transition. We suggest that further studies are required for obtaining a thorough understanding of the direct I-QH transition observed in nano-scale charge layers.
引用
收藏
页码：1175 / 1193
页数：19
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