Interactions between lasers and two-dimensional transition metal dichalcogenides

被引:63
|
作者
Lu, Junpeng [1 ,2 ,3 ]
Liu, Hongwei [4 ]
Tok, Eng Soon [1 ]
Sow, Chorng-Haur [1 ,2 ,3 ]
机构
[1] Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore
[2] Natl Univ Singapore, Ctr Adv Mat 2D, 6 Sci Dr 2, Singapore 117546, Singapore
[3] Natl Univ Singapore, Graphene Res Ctr, 6 Sci Dr 2, Singapore 117546, Singapore
[4] ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way,Innovis 08-03, Singapore 138634, Singapore
关键词
MOS2 ATOMIC LAYERS; P-N-JUNCTION; MONOLAYER MOS2; LARGE-AREA; 2ND-HARMONIC GENERATION; VALLEY POLARIZATION; CDSXSE1-X NANOBELTS; AU NANOPARTICLES; EPITAXIAL-GROWTH; CARRIER DYNAMICS;
D O I
10.1039/c5cs00553a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The recent increasing research interest in two-dimensional (2D) layered materials has led to an explosion of in the discovery of novel physical and chemical phenomena in these materials. Among the 2D family, group-VI transition metal dichalcogenides (TMDs), such as represented by MoS2 and WSe2, are remarkable semiconductors with sizable energy band gaps, which make the TMDs promising building blocks for new generation optoelectronics. On the other hand, the specificity and tunability of the band gaps can generate particularly strong light-matter interactions between TMD crystals and specific photons, which can trigger complex and interesting phenomena such as photo-scattering, photo-excitation, photo-destruction, photo-physical modification, photochemical reaction and photooxidation. Herein, we provide an overview of the phenomena explained by various interactions between lasers and the 2D TMDs. Characterizations of the optical fundamentals of the TMDs via laser spectroscopies are reviewed. Subsequently, photoelectric conversion devices enabled by laser excitation and the functionality extension and performance improvement of the TMDs materials via laser modification are comprehensively summarized. Finally, we conclude the review by discussing the prospects for further development in this research area.
引用
收藏
页码:2494 / 2515
页数:22
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