Deposition of AZ5214-E layers on non-planar substrates with a "draping" technique

被引:2
|
作者
Elias, P. [1 ]
Gregusova, D. [1 ]
Strichovanec, P. [1 ]
Kostic, I. [2 ]
Novak, J. [1 ]
机构
[1] Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia
[2] Slovak Acad Sci, Inst Informat, Bratislava 84507, Slovakia
关键词
D O I
10.1109/ASDAM.2006.331163
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A draping technique was tested to deposit AZ5214-E resist on non-planar (100)oriented III-V substrates that contained various three-dimensional topographies. In each draping experiment, an AZ5214-E sheet was: (1) formed floating on the water surface, (2) lowered onto a non-planar substrate, and (3) draped over it during drying. Self-sustained and conformal AZ5214-E layers were formed over the non-planar substrates depending on drying temperature. Interactions between water and AZ5214-E can result in the depression of the glass transition temperature T-g of AZ5214-E material during drying, Hence, an AZ5214-E sheet that was formed glassy can become rubbery. At room temperature T < T-g, the sheet is glassy, and it can form a self-sustained or bridging layer over a 3D topography. By contrast, at T approximate to or > T-g, the sheet becomes rubbery and mouldable by adhesion and capillary forces. As the result, it can contour a 3D topography.
引用
收藏
页码:97 / 100
页数:4
相关论文
共 50 条
  • [31] OPEN RESONATOR TECHNIQUE OF NON-PLANAR DIELECTRIC OBJECTS AT MILLIMETER WAVELENGTHS
    Gui, Y.
    Dou, W.
    Yin, K.
    PROGRESS IN ELECTROMAGNETICS RESEARCH M, 2009, 9 : 185 - 197
  • [32] A Technique to Transfer Metallic Nanoscale Patterns to Small and Non-Planar Surfaces
    Smythe, Elizabeth J.
    Dickey, Michael D.
    Whitesides, George M.
    Capasso, Federico
    ACS NANO, 2009, 3 (01) : 59 - 65
  • [33] Effect of indenter size on critical conditions for contact damage in planar and non-planar bi-layers
    Qasim, Tarek
    Ford, Chris
    Bush, Mark
    Hu, Xiao-Zhi
    Strength, Fracture and Complexity, 2004, 2 (02) : 81 - 93
  • [34] Non-planar and masked-area epitaxy by organometallic chemical vapour deposition
    Bhat, R.
    Semiconductor Science and Technology, 1993, 8 (06) : 979 - 983
  • [35] Temperature-dependent facet development in the deposition of GaInP on non-planar surfaces
    Bastos, PL
    Anders, MJ
    Bongers, MMG
    Schermer, JJ
    Giling, LJ
    SURFACE SCIENCE, 1997, 370 (2-3) : 179 - 189
  • [36] EPITAXIAL RE-GROWTH OF GAAS BY MBE ON INSITU ETCHED, NON-PLANAR SUBSTRATES
    WARREN, AC
    PETTIT, GD
    MCINTURFF, DT
    WOODALL, JM
    KIRCHNER, PD
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S13 - S13
  • [37] A novel surface treatment for enhanced nucleation of diamond on foreign substrates and non-planar structures
    Rotter, S
    DIAMOND FILMS AND TECHNOLOGY, 1996, 6 (06): : 331 - 336
  • [38] SEEDING RECRYSTALLIZATION FOR PRODUCING THICK SILICON-ON-INSULATOR FILMS ON NON-PLANAR SUBSTRATES
    TILLACK, B
    HOEPPNER, K
    RICHTER, HH
    BANISCH, R
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4): : 237 - 241
  • [39] Non-planar Gardner double layers in two-ion-temperature dusty plasma
    Asaduzzaman, M.
    Mamun, A. A.
    JOURNAL OF PLASMA PHYSICS, 2012, 78 : 601 - 606
  • [40] Influence of the deposition parameters on the texture of pyrolytic carbon layers deposited on planar substrates
    De Pauw, V
    Kalhöfer, S
    Gerthsen, D
    CARBON, 2004, 42 (02) : 279 - 286