Thermal crosstalk in a group of pyroelectric sensitive elements for thermal imaging

被引:0
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作者
Yoon, YS [1 ]
Samoilov, VB
Kletsky, SV
机构
[1] Inha Univ, Res Inst Semicond & Thin Film Technol, Inchon 402751, South Korea
[2] Inst Phys, UA-03028 Kiev, Ukraine
[3] Inst Semicond Phys, UA-03028 Kiev, Ukraine
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中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
Temperature distributions under periodical M thermal excitation and the response of the thermal imaging device, composed of the group of pyroelectric sensitive elements mounted on a single silicon substrate, are presented. The sensitive element consists of a covering metal layer, infrared polymer absorber, front metal contact, sensitive pyroelectric element, the interconnecting column, and the bulk silicon readout. The results of numerical modeling show that the thermal crosstalk between sensitive elements to be critical especially at low frequency (f < 10 Hz) of periodically modulated light.
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页码:720 / 723
页数:4
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