Thermal crosstalk in a group of pyroelectric sensitive elements for thermal imaging
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Yoon, YS
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Inha Univ, Res Inst Semicond & Thin Film Technol, Inchon 402751, South KoreaInha Univ, Res Inst Semicond & Thin Film Technol, Inchon 402751, South Korea
Yoon, YS
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Samoilov, VB
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机构:Inha Univ, Res Inst Semicond & Thin Film Technol, Inchon 402751, South Korea
Samoilov, VB
Kletsky, SV
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机构:Inha Univ, Res Inst Semicond & Thin Film Technol, Inchon 402751, South Korea
Kletsky, SV
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[1] Inha Univ, Res Inst Semicond & Thin Film Technol, Inchon 402751, South Korea
Temperature distributions under periodical M thermal excitation and the response of the thermal imaging device, composed of the group of pyroelectric sensitive elements mounted on a single silicon substrate, are presented. The sensitive element consists of a covering metal layer, infrared polymer absorber, front metal contact, sensitive pyroelectric element, the interconnecting column, and the bulk silicon readout. The results of numerical modeling show that the thermal crosstalk between sensitive elements to be critical especially at low frequency (f < 10 Hz) of periodically modulated light.
机构:
Inha Univ, Res Inst Semicond & Thin Film Technol, Inchon 402751, South KoreaInha Univ, Res Inst Semicond & Thin Film Technol, Inchon 402751, South Korea
Yoon, YS
Samoilov, VB
论文数: 0引用数: 0
h-index: 0
机构:Inha Univ, Res Inst Semicond & Thin Film Technol, Inchon 402751, South Korea
Samoilov, VB
Kletsky, SV
论文数: 0引用数: 0
h-index: 0
机构:Inha Univ, Res Inst Semicond & Thin Film Technol, Inchon 402751, South Korea