XPS study of surface potential in AlGaN/GaN heterostructure with Cat-CVD SiN passivation

被引：3

作者：

Onojima, N. ^{[1
]}

Higashiwaki, M. ^{[1
]}

Matsui, T. ^{[1
]}

Mimura, T. ^{[1
,2
]}

Suda, J. ^{[3
]}

Kimoto, T. ^{[3
]}

机构：

[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

[3] Kyoto Univ, Nishikyo Ku, Kyoto 6158510, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674757

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

AlGaN surface potentials in AlGaN/GaN heterostructures with and without SiN passivation were investigated using x-ray photoelectron spectroscopy (XPS). SiN films were formed on AlGaN surfaces by catalytic chemical vapor deposition (Cat-CVD), which has already been found to increase two-dimensional electron gas (2DEG) density. Based on a simple electrostatic analysis, the 2DEG density is expected to increase as the AlGaN surface potential decreases. This study experimentally demonstrates that a reduction in the AlGaN surface potential is actually induced by Cat-CVD SiN passivation. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2354 / +

页数：2

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