The structural and electrical characterization of Al/GO-SiO2/p-Si photodiode

被引：32

作者：

Kocyigit, Adem ^{[1
]}

Karteri, Ibrahim ^{[2
,6
]}

Orak, Ikram ^{[3
,4
]}

Urus, Serhan ^{[5
,6
]}

Caylar, Mahmut ^{[6
]}

机构：

[1] Igdir Univ, Engn Fac, Dept Elect & Elect Engn, TR-76000 Igdir, Turkey

[2] Kahramanmaras Sutcu Imam Univ, Dept Energy Syst Engn, TR-46100 Kahramanmaras, Turkey

[3] Bingol Univ, Vocat Sch Hlth Serv, TR-12000 Bingol, Turkey

[4] Bingol Univ, Fac Sci & Arts, Dept Phys, TR-12000 Bingol, Turkey

[5] Kahramanmaras Sutcu Imam Univ, Fac Sci & Literature, Chem Dept, TR-46100 Kahramanmaras, Turkey

[6] Kahramanmaras Sutcu Imam Univ, Res & Dev Ctr Univ Ind Publ Relat, TR-46100 Kahramanmaras, Turkey

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2018年 / 103卷

关键词：

Schottky devices; Graphene oxide; SiO2; Composites; Al/GO-SiO2/p-Si; STATE ENERGY-DISTRIBUTIONS; SERIES RESISTANCE; BARRIER HEIGHT; ILLUMINATION IMPACT; SCHOTTKY DIODES; GRAPHENE; CAPACITANCE; FREQUENCY; FILMS;

D O I：

10.1016/j.physe.2018.06.006

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

GO-SiO2 composite structures were synthesized chemically and characterized by FTIR, XRD, TGA and SEM. The characterization results highlighted that the composite of the GO-SiO2 was obtained successfully and can be thought as interfacial layer between the metal and semiconductor. For that reason, the GO-SiO2 composites were inserted between Al metal and p-type Si semiconductor by spin coating technique, and Al/GO-SiO2/p-type Si device was obtained by aid of thermal evaporation. The obtained device was tested with I-V measurements for various illumination conditions. Ideality factor, barrier height and series resistance values were determined according to thermionic emission theory, Cheung and Norde functions. In addition, we studied transient photocurrent properties of the device. The results confirm that the device can be used as photodiode in the industrial applications as having good photostability and photoresponsivity.

引用

页码：452 / 458

页数：7

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