Photothermal deep-level transient spectroscopy of impurities and defects in semiconductors

被引：0
|
作者：
Mandelis, A [1 ]
Budiman, A [1 ]
Vargas, M [1 ]
机构：
[1] Univ Toronto, Dept Mech & Ind Engn, Photothermal & Optoelect Diagnost Labs, Toronto, ON M5S 3G8, Canada
来源：
EFFECT OF DISORDER AND DEFECTS IN ION-IMPLANTED SEMICONDUCTORS : OPTICAL AND PHOTOTHERMAL CHARACTERIZATION | 1997年 / 46卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：179 / 211
页数：33
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