Monte Carlo simulation of microwave noise temperature in cooled GaAs and InP

被引：0
|
作者：
Pantoja, JMM [1 ]
Lin, CI
Shaalan, M
Sebastian, JL
Hartnagel, HL
机构：
[1] Univ Complutense Madrid, Dept Fis Aplicada 3, E-28040 Madrid, Spain
[2] Tech Univ Darmstadt, Inst Hochfrequenztech, D-64283 Darmstadt, Germany
[3] Siemens AG, D-81359 Munich, Germany
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2000年 / 48卷 / 07期
关键词：
microwave noise; Monte Carlo;
D O I：
10.1109/22.853472
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simulation at microscopic level of the intrinsic microwave noise temperature associated to GaAs and InP semiconductors under far from equilibrium conditions has been performed. The dependence of the noise temperature on the electric field, doping level, and physical temperature has been investigated, and the results show the existence of threshold fields above which electron heating and partition noise due to intervalley scattering can make the cooling inefficient in terms of noise improvements. A comparison with available experimental data has also been made to verify the accuracy of the models used in the simulation.
引用
收藏
页码：1275 / 1279
页数：5
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